Issue 15

C O act of b T NCLUSION he comp the influ treatmen ivated wafers onding stren stress intensity coefficient Y(  ) Figure 7 : E S liance meth ence of the s t and the b during the m gth. 0.0 50 60 70 80 90 100 stimation of 0 0 1 2 3 4 5 6 maximum force [N] Figure 8 : M od is a suitab pecimen geo onding temp anufacturin K. Vogel et 0.1 0 r dimensionless 50 40 ann aximum forc le approach metry is con erature itself g process lea alii, Frattura ed .2 0.3 elative crack MIN stress intensit 100 ealing tempe non-activate oxygen acti nitrogen act es for differen to estimate sidered durin directly affe ds to signific Integrità Struttu 0.4 length  Si-Si geom Si-Si geom y coefficient a 1 rature [°C] d vated ivated t pre and heat the fracture t g the calcula ct the measu antly reduced rale, 15 (2011) 0.5 etry 1 etry 2 s a function of 50 Anne treatments. oughness of tion of stress red maximu annealing t 21-28; DOI: 10 0.6 geometry. aling [°C] direct bond intensity coe m force. Th emperatures .3221/IGF-ESIS. ed wafers. W fficient, the e use of pla without any 15.03 27 hile pre- sma loss