Issue 15

K. V 28 Cu the dep R E [1] [2] [3] [4] [5] [6] [7] [8] [9] [10 ogel et alii, Fra rrently, the s results of t ending on th FERENCES G. Gerlach, M. Wiemer B. Michel, R M. Wiemer, D. Wuensch Q. Tong, U M. Wiemer 682E (2001 A. Ploessl, G T. Suni, Di (2006). J. Bagdahn, ] D. Munz, R ttura ed Integrit tress intensit he complian e applied loa W. Doetzel: , J. Froemel, . Aschenbre J. Froemel, M , B. Mueller, . Goesele, Se , T. Otto, T. ). . Kraeuter, rect wafer b A. Ploessl, M .T. Bubsey, J à Strutturale, 15 y coefficient ce method. d will be carr Introduction T. Gessner, nner, (2004) . Haubold, M. Wiemer, miconductor Gessner, K. Materials Sci onding for . Wiemer, M .E. Srawley, I (2011) 21-28; is calculated In addition t ied out in fu to microsys T. Otto, In: T 307. C. Jia, D. Wu T. Gessner, wafer bondi Hiller, K. Ka ence and Eng MEMS and . Petzold, El nt. J. of Frac DOI: 10.3221/IG using anoth o the nume ture. tem technolo he World o ensch, T. Ge H. Mischke, ng, John Wile pser, H. Seid ineering, R2 microelectro ectrochemica ture, 16(4) (1 F-ESIS.15.03 er numeric a ric calculatio gy. John Wil f Electronic ssner, ECS T In: MNI Pro y & Sons, Lt el, J. Bagdah 5 (1999) 1. nics, PhD th l Society, (20 980) 359. pproach, the ns the meas ey & Sons, L Packaging an ransactions, ceedings, Da d., New Yor n, M. Petzol esis, Helsink 01) 218. energy relea urement of td., (2008). d System In 16(8) (2008) rmstadt, (201 k, (1999). d, Materials R i University se rate, to ve the crack len tegration, Ed 81. 0) 66. esearch Soc of Technol rify gth . by iety, ogy,