Issue 15
K. V 24 dis rela the Aft [10 the Its tou E X the pre hou and I ogel et alii, Fra placement u z tive crack len a w compliance ( ) C er scaling the ] '( ) C function of ( ) Y minimum, t ghness. PERIMENT n addition micro-chev divided int particle conc -bonded at r rs. The anne the bottom ttura ed Integrit constant, the gths 0 0 a w C( ) can be i ( ) z u F compliance ( 1 ² E t C the stress inte 1 2 d C d he stress int to the numer ron-test. Bef o the followi entration ha oom tempera aling conditi of the specim à Strutturale, 15 reaction for 1 1 a w nterpolated, with the thic ) nsity coeffic 1 0 0 '( ) ensity coeffi ical determin ore carrying ng steps. Fir s to be reduc ture afterwar ons can vary en, Fig. 3. B Figu (2011) 21-28; ces F are sim using the equ kness t of the ient can be d cient Y MIN c ation of the out the expe st, all Si wafe ed within a s ds. Before di between dif efore starting re 3 : Preparati DOI: 10.3221/IG ulated subje ation sample, the etermined an be calcula stress intensi riments, the rs are RCA-c pin dryer, aft cing the wafe ferent batche the experim on of the micr F-ESIS.15.03 cted to a wel Young’s mo ted. Insertin ty coefficient samples have leaned befor er rinsing the r stacks into s. To initiate ent, the spec o-chevron-sam l defined cra dulus E and g Y MIN in the maximu to be prepa e applying th wafers in de specimens, t the force, tw imen has to b ples. ck propagati the Poissons Eq. (1) l eads m force is m red. Their pr e low pressu ionised wate hey have to b o studs are e preloaded on. For diffe (2) (3) ratio of sili (4) (5) to the frac easured durin eparation can re plasma. T r. The wafers e annealed f glued on the . rent con ture g a be hen are or 6 top
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