Issue 15

C di Kl Ch kla De Fra A B cer dir add itse hig Th mi nu Th str int cra len Th est tre K E I N M rack pro rect bo aus Vogel emnitz Unive us.vogel@s20 tlef Billep unhofer Resea STRACT . W tain interme ect bonding ition to the lf. It can va her toughne e fracture to cro-chevron merical anal e maximum ess intensity ensity coeffi ck. The str gth itself. e paper is imation of d atments and YWORDS . C TRODUCTIO icro E comp millim pagati nded si , Dirk Wu rsity of Techno 05.tu-chemni , Maik Wi rch Institutio afer bondin diate layers technology wafer mat ry for differ ss of the bo ughness is -specimen, ysis with exp force is m coefficient cient is the ess intensity focused on imensionle annealing t ompliance m N lectro Mech lex by using etre range ( on in m licon-si ensch, Ale logy, 09107, dirk.wu emer n for Electron g describe . Current inv . It is carrie erials, the t ent pre-trea nded interf a suitable va the fractur erimental m easured dur can be det compliance coefficien the micro- ss stress inte emperatures ethod; FE anical System different m smaller than K. Vogel et icro-ch licon w xey Shapo Chemnitz ensch@zfm.tu ic Nano Syste s all techno estigations d out witho oughness o tments. Fur ace. lue to descr e toughnes easuremen ing a micro ermined by method. Th t can be dir chevron-tes nsity coeffi on the mea -analysis; Fr s (MEMS) a aterials in on 100 µm) wh alii, Frattura ed evron-t afers rin, Jan M ms ENAS, logies for j are focused ut intermed f the bonde thermore, a ibe the dam s can be d t of the max -chevron-te a FE-simu e complian ectly derive t for direct cient as a fu sured maxi acture tough re applied in e system. ME ich determin Integrità Struttu est sam ehner Technologie-C oining two on so-calle iate layers d interface n increase o age behavio etermined imum force st using a M lation only. ce of the wh d from the bonded sil nction of ge mum force ness; Micro a wide indus MS have at es its functio rale, 15 (2011) ples of ampus 3, 091 or more s d low tempe and at temp also depend f the annea ur of the bo either num . ode I load One possib ole specime simulated icon-silicon ometry, the are analysed -chevron-te trial range. T least one ty n [1]. They 21-28; DOI: 10 26 Chemnitz ubstrates di rature bond eratures be s on the b ling temper nded interf erically or ing. The m ility to esti n increases compliance wafers. Ad influence o and discuss st; Silicon d heir structur pical compon often consist .3221/IGF-ESIS. ; rectly or us ing as a spe low 400 °C onding proc ature leads ace. Based o by combin inimum of mate the st with a grow and the cr ditional to f different p ed. irect bondin es become m ent size in s of two or m 15.03 21 ing cial . In ess to a n a ing the ress ing ack the re- g. ore ub- ore